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| ?2002 fairchild semiconductor corporation rev. a, july 2002 FJV3106R npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 10 v i c collector current 100 ma p c collector power dissipation 200 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =10 a, i e =0 50 v bv ceo collector-emitter breakdown voltage i c =100 a, i b =0 50 v i cbo collector cut-off current v cb =40v, i e =0 0.1 a h fe dc current gain v ce =5v, i c =5ma 68 v ce (sat) collector-emitter saturation voltage i c =10ma, i b =0.5ma 0.3 v c ob output capacitance v ce =10ma, i e =0 f=1.0mhz 3.7 pf f t current gain bandwidth product v cb =10v, i c =5ma 250 mhz v i (off) input off voltage v ce =5v, i c =100 a0.3 v v i (on) input on voltage v ce =0.3v, i c =1ma 1.4 v r 1 input resistor 7 10 13 k ? r 1 /r 2 resistor ratio 0.19 0.21 0.24 FJV3106R switching application (bias resistor built in) ? switching circuit, inverter, interface circuit, driver circuit ? built in bias resistor (r 1 =10k ? , r 2 =47k ? ) ? complement to fjv4106r equivalent circuit b e c r1 r2 r26 marking sot-23 1. base 2. emitter 3. collector 1 2 3
?2002 fairchild semiconductor corporation FJV3106R rev. a, july 2002 typical characteristics figure 1. dc current gain figure 2. input on voltage figure 3. input off voltage figure 4. power derating 0.1 1 10 100 1 10 100 1000 v ce = 5v r 1 = 10k r 2 = 47k h fe , dc current gain i c [ma], collector current 0.1 1 10 100 0.1 1 10 100 v ce =0.3v r 1 = 10k r 2 = 47k v i (on)[v], input voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 1k 10k v ce = 5v r 1 = 10k r 2 = 47k i c [ a], collector current v i (off)[v], input off voltage 0 255075100125150175 0 50 100 150 200 250 300 350 400 p c [mw], power dissipation t a [ o c], ambient temperature dimensions in millimeters rev. a, july 2002 ?2002 fairchild semiconductor corporation package dimensions FJV3106R 0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.023 0.20 min 0.40 0.03 sot-23 !"#$ %"& '(% & % )'"% &' ! %*$%('( (! '&$$% "'+ '% ,'*- %& ''.$ '- '( $$ %+ !% !"'* %("& % % $% %( / 0 ! 11 2 2 34 5 1 23 45 11 3 45 1 1 1 2 1 3 21 6 2 7 1 21 11 2 1 21 11 23 2 $ 2 ( ( % 1 1 1 1 2 2 1 2 3 11 2 1 2 1 1 2 1 1 1 2 1 2 " $ $ ( $ !"# ! $ % & '( ) * + ,-./ , 0 " " "! "# ! 1+# ! % ! 0 #23 #24 #25 ( ( + # 6% 6 7 ! 0!$ 8! # ! 0!, 8 0! ,! 0 +$! '! |
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